onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK FDB050AN06A0
- RS Stock No.:
- 809-0809
- Mfr. Part No.:
- FDB050AN06A0
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£5.08
(exc. VAT)
£6.10
(inc. VAT)
FREE delivery for orders over £50.00
- Final 636 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 + | £2.54 | £5.08 |
*price indicative
- RS Stock No.:
- 809-0809
- Mfr. Part No.:
- FDB050AN06A0
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 11 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 245 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Width | 9.65mm | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 245 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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