onsemi PowerTrench N-Channel MOSFET, 229 A, 80 V, 7-Pin D2PAK FDB024N08BL7
- RS Stock No.:
- 166-3399
- Mfr. Part No.:
- FDB024N08BL7
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,466.40
(exc. VAT)
£1,760.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 05 January 2026
Units | Per unit | Per Reel* |
---|---|---|
800 + | £1.833 | £1,466.40 |
*price indicative
- RS Stock No.:
- 166-3399
- Mfr. Part No.:
- FDB024N08BL7
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 229 A | |
Maximum Drain Source Voltage | 80 V | |
Series | PowerTrench | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 2.4 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 246 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 137 nC @ 40 V | |
Length | 10.2mm | |
Number of Elements per Chip | 1 | |
Width | 9.4mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 4.7mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 229 A | ||
Maximum Drain Source Voltage 80 V | ||
Series PowerTrench | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 246 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 137 nC @ 40 V | ||
Length 10.2mm | ||
Number of Elements per Chip 1 | ||
Width 9.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.7mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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