onsemi PowerTrench N-Channel MOSFET, 15 A, 150 V, 3-Pin TO-220F FDPF390N15A
- RS Stock No.:
- 864-8603
- Mfr. Part No.:
- FDPF390N15A
- Brand:
- onsemi
Subtotal (1 pack of 10 units)*
£9.28
(exc. VAT)
£11.14
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 970 left, shipping from 06 October 2025
Units | Per unit | Per Pack* |
---|---|---|
10 + | £0.928 | £9.28 |
*price indicative
- RS Stock No.:
- 864-8603
- Mfr. Part No.:
- FDPF390N15A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 15 A | |
Maximum Drain Source Voltage | 150 V | |
Series | PowerTrench | |
Package Type | TO-220F | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 22 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 10.36mm | |
Typical Gate Charge @ Vgs | 14.3 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 4.9mm | |
Transistor Material | Si | |
Height | 16.07mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 22 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 14.3 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.9mm | ||
Transistor Material Si | ||
Height 16.07mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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