onsemi PowerTrench N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 FDP090N10
- RS Stock No.:
- 145-5323
- Mfr. Part No.:
- FDP090N10
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
£79.85
(exc. VAT)
£95.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,950 unit(s) shipping from 28 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.597 | £79.85 |
| 100 + | £1.501 | £75.05 |
*price indicative
- RS Stock No.:
- 145-5323
- Mfr. Part No.:
- FDP090N10
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | PowerTrench | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 89 nC @ 10 V | |
| Height | 16.51mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 89 nC @ 10 V | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
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