onsemi PowerTrench N-Channel MOSFET, 214 A, 100 V, 3-Pin TO-220AB FDP036N10A
- RS Stock No.:
- 146-1975
- Mfr. Part No.:
- FDP036N10A
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)*
£125.65
(exc. VAT)
£150.80
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 750 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | £2.513 | £125.65 |
| 250 - 450 | £2.312 | £115.60 |
| 500 - 1200 | £2.149 | £107.45 |
| 1250 - 2450 | £2.093 | £104.65 |
| 2500 + | £2.043 | £102.15 |
*price indicative
- RS Stock No.:
- 146-1975
- Mfr. Part No.:
- FDP036N10A
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 214 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | PowerTrench | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.6 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 333 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 89 nC @ 10 V | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 214 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.6 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 89 nC @ 10 V | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
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