onsemi PowerTrench N-Channel MOSFET, 6 A, 100 V, 3-Pin TO-220AB FDP3682
- RS Stock No.:
- 671-4837
- Mfr. Part No.:
- FDP3682
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£4.30
(exc. VAT)
£5.15
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 26 December 2025
Units | Per unit | Per Pack* |
---|---|---|
5 + | £0.86 | £4.30 |
*price indicative
- RS Stock No.:
- 671-4837
- Mfr. Part No.:
- FDP3682
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 36 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 95 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 18.5 nC @ 10 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Height | 9.4mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 95 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 18.5 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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