onsemi PowerTrench N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 FDP090N10
- RS Stock No.:
- 759-9670
- Mfr. Part No.:
- FDP090N10
- Brand:
- onsemi
Subtotal (1 unit)*
£2.14
(exc. VAT)
£2.57
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 26 December 2025
Units | Per unit |
---|---|
1 - 9 | £2.14 |
10 + | £1.84 |
*price indicative
- RS Stock No.:
- 759-9670
- Mfr. Part No.:
- FDP090N10
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 75 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220 | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 208 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 89 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Height | 16.51mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 89 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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