onsemi PowerTrench N-Channel MOSFET, 50 A, 250 V, 3-Pin TO-220 FDP2710
- RS Stock No.:
- 145-4439
- Mfr. Part No.:
- FDP2710
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£105.05
(exc. VAT)
£126.05
(inc. VAT)
FREE delivery for orders over £50.00
- 800 unit(s) ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.101 | £105.05 |
*price indicative
- RS Stock No.:
- 145-4439
- Mfr. Part No.:
- FDP2710
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | PowerTrench | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 42 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 260 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 250 V | ||
Series PowerTrench | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 260 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 78 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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