onsemi PowerTrench N-Channel MOSFET, 50 A, 250 V, 3-Pin D2PAK FDB2710
- RS Stock No.:
- 759-8961
- Mfr. Part No.:
- FDB2710
- Brand:
- onsemi
Subtotal (1 unit)*
£4.43
(exc. VAT)
£5.32
(inc. VAT)
FREE delivery for orders over £50.00
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Units | Per unit |
---|---|
1 - 9 | £4.43 |
10 - 99 | £3.82 |
100 - 499 | £3.31 |
500 + | £2.91 |
*price indicative
- RS Stock No.:
- 759-8961
- Mfr. Part No.:
- FDB2710
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 50 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | D2PAK (TO-263) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 260 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 78 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 10.67mm | |
Maximum Operating Temperature | +150 °C | |
Width | 11.33mm | |
Minimum Operating Temperature | -55 °C | |
Height | 4.83mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type D2PAK (TO-263) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 260 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 78 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.67mm | ||
Maximum Operating Temperature +150 °C | ||
Width 11.33mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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