Wolfspeed Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge CAS120M12BM2
- RS Stock No.:
- 916-3879
- Mfr. Part No.:
- CAS120M12BM2
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 unit)*
£449.18
(exc. VAT)
£539.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 17 unit(s) ready to ship
- Plus 11 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £449.18 |
| 5 - 9 | £437.50 |
| 10 - 24 | £426.27 |
| 25 + | £415.49 |
*price indicative
- RS Stock No.:
- 916-3879
- Mfr. Part No.:
- CAS120M12BM2
- Brand:
- Wolfspeed
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 193 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | Half Bridge | |
| Mounting Type | Screw Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 925 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Length | 106.4mm | |
| Transistor Material | SiC | |
| Typical Gate Charge @ Vgs | 378 nC @ 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Width | 61.4mm | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 2.4V | |
| Height | 30mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 193 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Half Bridge | ||
Mounting Type Screw Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 925 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Length 106.4mm | ||
Transistor Material SiC | ||
Typical Gate Charge @ Vgs 378 nC @ 20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Width 61.4mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 2.4V | ||
Height 30mm | ||
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