Wolfspeed Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge CAS120M12BM2
- RS Stock No.:
- 916-3879
- Mfr. Part No.:
- CAS120M12BM2
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 unit)*
£449.18
(exc. VAT)
£539.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 17 unit(s) ready to ship
- Plus 11 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £449.18 |
| 5 - 9 | £437.50 |
| 10 - 24 | £426.27 |
| 25 + | £415.49 |
*price indicative
- RS Stock No.:
- 916-3879
- Mfr. Part No.:
- CAS120M12BM2
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 193 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | Half Bridge | |
| Mounting Type | Screw Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 925 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
| Width | 61.4mm | |
| Typical Gate Charge @ Vgs | 378 nC @ 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 106.4mm | |
| Height | 30mm | |
| Forward Diode Voltage | 2.4V | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 193 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type Half Bridge | ||
Mounting Type Screw Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 925 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
Width 61.4mm | ||
Typical Gate Charge @ Vgs 378 nC @ 20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 106.4mm | ||
Height 30mm | ||
Forward Diode Voltage 2.4V | ||
Minimum Operating Temperature -40 °C | ||
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
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