MPN

Diodes Inc Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 DMN2014LHAB-7

Subtotal (1 reel of 3000 units)*

£411.00

(exc. VAT)

£492.00

(inc. VAT)

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£0.137	£411.00

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	9.3 A
	Maximum Drain Source Voltage	20 V
	Package Type	U-DFN2030
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	28 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Maximum Power Dissipation	1.7 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Length	3.05mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	16 nC @ 4.5 V
	Width	2.05mm
	Number of Elements per Chip	2
	Minimum Operating Temperature	-55 °C
	Height	0.6mm

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 9.3 A
	Maximum Drain Source Voltage 20 V
	Package Type U-DFN2030
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 28 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Maximum Power Dissipation 1.7 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Length 3.05mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 16 nC @ 4.5 V
	Width 2.05mm
	Number of Elements per Chip 2
	Minimum Operating Temperature -55 °C
	Height 0.6mm

MOSFET Transistors, Diodes Inc.

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