Diodes Inc Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 DMN2014LHAB-7

Subtotal (1 reel of 3000 units)*

£411.00

(exc. VAT)

£492.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.137£411.00

*price indicative

RS Stock No.:
165-8742
Mfr. Part No.:
DMN2014LHAB-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

9.3 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2030

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

16 nC @ 4.5 V

Width

2.05mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

3.05mm

Height

0.6mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Diodes Inc.



MOSFET Transistors, Diodes Inc.

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