Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

RS Stock No.:: 165-8742
Mfr. Part No.:: DMN2014LHAB-7
Brand:: DiodesZetex

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

Price Each (On a Reel of 3000)

£0.152

(exc. VAT)

£0.182

(inc. VAT)

2950 In stock - FREE next working day delivery available

Units	Per unit	Per Reel*
3000 +	£0.152	£456.00

*price indicative

RS Stock No.:: 165-8742
Mfr. Part No.:: DMN2014LHAB-7
Brand:: DiodesZetex

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	20 V
Package Type	U-DFN2030
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	28 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Width	2.05mm
Number of Elements per Chip	2
Transistor Material	Si
Length	3.05mm
Typical Gate Charge @ Vgs	16 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	0.6mm

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

Dual N-Channel MOSFET, Diodes Inc.

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