STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin HU3PAK SCT070HU120G3AG

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Subtotal (1 reel of 600 units)*

£7,043.40

(exc. VAT)

£8,452.20

(inc. VAT)

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Per Reel*
600 +£11.739£7,043.40

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RS Stock No.:
215-241
Mfr. Part No.:
SCT070HU120G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

HU3PAK

Series

SCT

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

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