Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
- RS Stock No.:
- 145-8904
- Mfr. Part No.:
- IPP042N03LGXKSA1
- Brand:
- Infineon
Save 9% when you buy 250 units
Subtotal (1 tube of 50 units)*
£48.65
(exc. VAT)
£58.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,500 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.973 | £48.65 |
| 100 - 200 | £0.915 | £45.75 |
| 250 + | £0.876 | £43.80 |
*price indicative
- RS Stock No.:
- 145-8904
- Mfr. Part No.:
- IPP042N03LGXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V | |
| Transistor Material | Si | |
| Height | 15.95mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.57mm | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 18 nC @ 4.5 V | ||
Transistor Material Si | ||
Height 15.95mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
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