Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220 IPP180N10N3GXKSA1
- RS Stock No.:
- 892-2318
- Mfr. Part No.:
- IPP180N10N3GXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£8.69
(exc. VAT)
£10.43
(inc. VAT)
FREE delivery for orders over £50.00
- 220 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 10 | £0.869 | £8.69 |
20 - 40 | £0.652 | £6.52 |
50 - 90 | £0.565 | £5.65 |
100 - 190 | £0.521 | £5.21 |
200 + | £0.478 | £4.78 |
*price indicative
- RS Stock No.:
- 892-2318
- Mfr. Part No.:
- IPP180N10N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 43 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 33 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 71 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.57mm | |
Length | 10.36mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Height | 15.95mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.57mm | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 15.95mm | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
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