Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 100 V, 3-Pin TO-220 IPP180N10N3GXKSA1

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£8.69

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£10.43

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10 - 10£0.869£8.69
20 - 40£0.652£6.52
50 - 90£0.565£5.65
100 - 190£0.521£5.21
200 +£0.478£4.78

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RS Stock No.:
892-2318
Mfr. Part No.:
IPP180N10N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Length

10.36mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

15.95mm

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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