Infineon OptiMOS™ 3 N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP IPA086N10N3GXKSA1
- RS Stock No.:
- 145-8705
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£40.05
(exc. VAT)
£48.05
(inc. VAT)
FREE delivery for orders over £50.00
- 1,700 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.801 | £40.05 |
100 - 200 | £0.673 | £33.65 |
250 - 450 | £0.633 | £31.65 |
500 - 950 | £0.585 | £29.25 |
1000 + | £0.545 | £27.25 |
*price indicative
- RS Stock No.:
- 145-8705
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 45 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 15.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 37.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.65mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.85mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
Height | 16.15mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 37.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.65mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.85mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Height 16.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin TO-220 FP IPA086N10N3GXKSA1
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin TO-220FP STF100N10F7
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 3-Pin DPAK STD45N10F7
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220 FP IRFI4410ZPBF
- Infineon IPA N-Channel MOSFET 100 V, 3-Pin TO-220 FP IPA082N10NF2SXKSA1
- Infineon IPA N-Channel MOSFET 100 V, 3-Pin TO-220 FP IPA030N10NF2SXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 FP IPA028N08N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin DPAK IPD135N08N3GATMA1