Infineon OptiMOS™ 3 N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP IPA086N10N3GXKSA1

RS Stock No.:: 892-2125
Mfr. Part No.:: IPA086N10N3GXKSA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP IPA086N10N3GXKSA1

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£7.21

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£8.65

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In Stock

1,730 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£1.442	£7.21
50 - 120	£1.328	£6.64
125 - 245	£1.24	£6.20
250 - 495	£1.154	£5.77
500 +	£1.068	£5.34

*price indicative

RS Stock No.:: 892-2125
Mfr. Part No.:: IPA086N10N3GXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	45 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220 FP
	Series	OptiMOS™ 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	15.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	37.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.85mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	42 nC @ 10 V
	Length	10.65mm
	Transistor Material	Si
	Height	16.15mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 45 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220 FP
	Series OptiMOS™ 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 15.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 37.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.85mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 42 nC @ 10 V
	Length 10.65mm
	Transistor Material Si
	Height 16.15mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1

This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.

Features & Benefits

• N-channel configuration optimises current management
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use

Applications

• Ideal for high-frequency switching in electronic devices
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance

What is the significance of the low on-resistance feature in this device?

The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.

Can this MOSFET be used in automotive applications?

Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.

How does the gate threshold voltage influence circuit function?

The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.

What types of circuits are most compatible with this power transistor?

This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.