Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
- RS Stock No.:
- 892-2368
- Mfr. Part No.:
- IPP042N03LGXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£9.18
(exc. VAT)
£11.02
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 1,600 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £0.918 | £9.18 |
| 20 - 90 | £0.547 | £5.47 |
| 100 - 240 | £0.53 | £5.30 |
| 250 - 490 | £0.517 | £5.17 |
| 500 + | £0.505 | £5.05 |
*price indicative
- RS Stock No.:
- 892-2368
- Mfr. Part No.:
- IPP042N03LGXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.57mm | ||
Transistor Material Si | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 18 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
- STMicroelectronics STripFET F3 N-Channel MOSFET 30 V, 3-Pin D2PAK STB70NF3LLT4
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP100N08N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 IPP048N04NGXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 FP IPA041N04NGXKSA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 IPD70N03S4L04ATMA1
- Nexperia N-Channel MOSFET 30 V, 5-Pin LFPAK PSMN2R4-30MLDX
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SiRA84BDP-T1-GE3