Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 3-Pin TO-220 IPP048N04NGXKSA1

RS Stock No.:: 165-8112
Mfr. Part No.:: IPP048N04NGXKSA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 3-Pin TO-220 IPP048N04NGXKSA1

Bulk discount available

Subtotal (1 tube of 50 units)*

£53.95

(exc. VAT)

£64.75

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 150 unit(s), ready to ship

Units	Per unit	Per Tube*
50 - 50	£1.079	£53.95
100 - 200	£0.863	£43.15
250 - 450	£0.809	£40.45
500 - 950	£0.755	£37.75
1000 +	£0.701	£35.05

*price indicative

RS Stock No.:: 165-8112
Mfr. Part No.:: IPP048N04NGXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	OptiMOS 3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	79W
	Typical Gate Charge Qg @ Vgs	31nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.89V
	Maximum Operating Temperature	175°C
	Height	15.95mm
	Standards/Approvals	No
	Width	4.572 mm
	Length	10.36mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series OptiMOS 3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 79W
	Typical Gate Charge Qg @ Vgs 31nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.89V
	Maximum Operating Temperature 175°C
	Height 15.95mm
	Standards/Approvals No
	Width 4.572 mm
	Length 10.36mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon OptiMOS™ 3 Series MOSFET, 70A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IPP048N04NGXKSA1

This MOSFET is intended for high-efficiency power applications, acting as a vital component in various electronic systems. It ensures consistent performance in challenging environments due to its low on-resistance and substantial power dissipation capability.

Features & Benefits

• Supports up to 70A continuous drain current

• Maximum drain-source voltage of 40V for broad applicability

• Single enhancement mode design enhances operational efficiency

• Low maximum drain-source resistance of 4.8 mΩ minimises heat generation

• Power dissipation capability of 79W optimises thermal management

• Accommodates gate voltage swings from -20V to +20V for improved gate drive versatility

Applications

• Power supply circuits in automation systems

• Motor control in industrial environments

• Power converters for efficient energy management

• Renewable energy systems for effective power handling

• High current switch in electronics

What is the operating temperature range for this component?

The operating temperature range is -55 °C to +175 °C, ensuring effective operation across various conditions.

Can it be used in parallel configurations?

Yes, parallel usage is possible to enhance current handling, provided appropriate thermal management is in place.

What are the recommended gate drive levels for optimal performance?

For optimal performance, it is advised to drive the gate between 10V and 20V, adhering to maximum gate threshold limits.

How can heat dissipation be managed in applications using this device?

Using an appropriate heat sink and ensuring a proper PCB layout can effectively manage heat dissipation.

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.