Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP048N04NGXKSA1
- RS Stock No.:
- 892-2346
- Mfr. Part No.:
- IPP048N04NGXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£3.97
(exc. VAT)
£4.76
(inc. VAT)
FREE delivery for orders over £50.00
- Final 200 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 + | £0.397 | £3.97 |
*price indicative
- RS Stock No.:
- 892-2346
- Mfr. Part No.:
- IPP048N04NGXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 70 A | |
Maximum Drain Source Voltage | 40 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 79 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.36mm | |
Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.572mm | |
Minimum Operating Temperature | -55 °C | |
Height | 15.95mm | |
Forward Diode Voltage | 0.89V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.572mm | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Forward Diode Voltage 0.89V | ||
Infineon OptiMOS™3 Power MOSFETs, up to 40V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon OptiMOS™ 3 Series MOSFET, 70A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IPP048N04NGXKSA1
Features & Benefits
• Maximum drain-source voltage of 40V for broad applicability
• Single enhancement mode design enhances operational efficiency
• Low maximum drain-source resistance of 4.8 mΩ minimises heat generation
• Power dissipation capability of 79W optimises thermal management
• Accommodates gate voltage swings from -20V to +20V for improved gate drive versatility
Applications
• Motor control in industrial environments
• Power converters for efficient energy management
• Renewable energy systems for effective power handling
• High current switch in electronics
What is the operating temperature range for this component?
Can it be used in parallel configurations?
What are the recommended gate drive levels for optimal performance?
How can heat dissipation be managed in applications using this device?
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 IPP048N04NGXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 3-Pin TO-220 FP IPA041N04NGXKSA1
- ROHM N-Channel MOSFET 40 V, 3-Pin TO-220AB RX3G07CGNC16
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin DPAK FDD8445
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin I2PAK IPI70N04S406AKSA1
- onsemi Dual N-Channel MOSFET 40 V, 8-Pin DFN NVMFD5C462NT1G
- Infineon OptiMOS™ Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC70N04S5L4R2ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC70N04S54R6ATMA1