Infineon OptiMOS™ 3 N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1

RS Stock No.:: 165-6701
Mfr. Part No.:: IPP320N20N3GXKSA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1

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Subtotal (1 tube of 50 units)*

£85.40

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£102.50

(inc. VAT)

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Plus 250 unit(s) shipping from 27 October 2025

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Units	Per unit	Per Tube*
50 - 50	£1.708	£85.40
100 +	£1.606	£80.30

*price indicative

RS Stock No.:: 165-6701
Mfr. Part No.:: IPP320N20N3GXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	34 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-220
	Series	OptiMOS™ 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	32 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	136 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	22 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.36mm
	Width	4.57mm
	Height	15.95mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 34 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-220
	Series OptiMOS™ 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 32 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 136 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 22 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.36mm
	Width 4.57mm
	Height 15.95mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon OptiMOS™ 3 Series MOSFET, 34A Maximum Continuous Drain Current, 136W Maximum Power Dissipation - IPP320N20N3GXKSA1

This MOSFET offers high performance for various electronic applications. With continuous drain current capability of up to 34A and a drain-source voltage rating of 200V, it serves as an efficient power solution. The enhancement mode operation ensures dependable performance in circuits requiring switching and synchronous rectification.

Features & Benefits

• N-channel design for effective power conversion
• Low on-resistance reduces energy loss
• High operational temperature tolerance for extreme conditions
• Compatible with high-frequency switching applications
• Pb-free and RoHS compliant for environmentally friendly use
• Halogen-free materials enhance safety and compliance

Applications

• Used in power supplies for industrial automation
• Suitable for synchronous rectification in DC-DC converters
• Applicable in electric vehicle charging systems
• Ideal for battery management systems in consumer electronics
• Utilised in renewable energy inverters for efficient power transfer

What is the maximum temperature range for operation?

The component operates effectively between -55°C and +175°C, making it suitable for diverse environmental conditions.

Can it manage high drain currents?

Yes, it supports continuous drain currents of up to 34A, suitable for high power applications.

What advantages does the low RDS(on) feature provide?

The low on-resistance significantly lowers energy losses during operation, enhancing efficiency in high-power switching applications.

Is it suitable for automotive applications?

With its high temperature rating and low on-resistance, it is appropriate for automotive applications, providing performance under challenging conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.