Infineon OptiMOS™ 3 N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1
- RS Stock No.:
- 823-5642
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£5.58
(exc. VAT)
£6.70
(inc. VAT)
FREE delivery for orders over £50.00
- 20 unit(s) ready to ship
- Plus 4 unit(s) ready to ship from another location
- Plus 294 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
2 - 98 | £2.79 | £5.58 |
100 - 198 | £2.03 | £4.06 |
200 - 498 | £1.925 | £3.85 |
500 - 998 | £1.71 | £3.42 |
1000 + | £1.65 | £3.30 |
*price indicative
- RS Stock No.:
- 823-5642
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 34 A | |
Maximum Drain Source Voltage | 200 V | |
Package Type | TO-220 | |
Series | OptiMOS™ 3 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 32 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 136 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Length | 10.36mm | |
Transistor Material | Si | |
Width | 4.57mm | |
Height | 15.95mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 32 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Transistor Material Si | ||
Width 4.57mm | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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