Infineon OptiMOS™ 3 N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1
- RS Stock No.:
- 823-5642
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£5.58
(exc. VAT)
£6.70
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 20 unit(s) shipping from 27 October 2025
- Plus 4 unit(s) shipping from 27 October 2025
- Plus 294 unit(s) shipping from 03 November 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 98 | £2.79 | £5.58 |
| 100 - 198 | £2.03 | £4.06 |
| 200 - 498 | £1.925 | £3.85 |
| 500 - 998 | £1.71 | £3.42 |
| 1000 + | £1.65 | £3.30 |
*price indicative
- RS Stock No.:
- 823-5642
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 32 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 136 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 32 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Width 4.57mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 34A Maximum Continuous Drain Current, 136W Maximum Power Dissipation - IPP320N20N3GXKSA1
Features & Benefits
• Low on-resistance reduces energy loss
• High operational temperature tolerance for extreme conditions
• Compatible with high-frequency switching applications
• Pb-free and RoHS compliant for environmentally friendly use
• Halogen-free materials enhance safety and compliance
Applications
• Suitable for synchronous rectification in DC-DC converters
• Applicable in electric vehicle charging systems
• Ideal for battery management systems in consumer electronics
• Utilised in renewable energy inverters for efficient power transfer
What is the maximum temperature range for operation?
Can it manage high drain currents?
What advantages does the low RDS(on) feature provide?
Is it suitable for automotive applications?
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 3-Pin TO-220 IPP320N20N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 3-Pin D2PAK IPB320N20N3GATMA1
- Infineon HEXFET N-Channel MOSFET 200 V, 8-Pin SuperSO8 5 x 6 IRFH5020TRPBF
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor 200 V, 3-Pin D2PAK IPB320N20N3GATMA1
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP43N60DM2
- Infineon OptiMOS™ 3 N-Channel MOSFET 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1
- Vishay TrenchFET Dual N-Channel MOSFET 200 V, 3-Pin TO-220 SUP90100E-GE3


