N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1

RS Stock No.:: 911-4868
Mfr. Part No.:: IPB320N20N3GATMA1
Brand:: Infineon

N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1

1000 In stock - FREE next working day delivery available

Price Each (On a Reel of 1000)

£1.047

(exc. VAT)

£1.256

(inc. VAT)

Units	Per unit	Per Reel*
1000 +	£1.047	£1,047.00
*price indicative

RS Stock No.:: 911-4868
Mfr. Part No.:: IPB320N20N3GATMA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 911-4868
Mfr. Part No.:: IPB320N20N3GATMA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	34 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	32 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	136 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	22 nC @ 10 V
Width	9.45mm
Maximum Operating Temperature	+175 °C
Length	10.31mm
Minimum Operating Temperature	-55 °C
Height	4.57mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	34 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	32 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	136 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	22 nC @ 10 V
Width	9.45mm
Maximum Operating Temperature	+175 °C
Length	10.31mm
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1

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