Infineon OptiMOS™ 3 N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1

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Packaging Options:
RS Stock No.:
752-8381
Mfr. Part No.:
IPP110N20N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.36mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.45mm

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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