Infineon OptiMOS™ N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK IPB107N20N3GATMA1

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Subtotal (1 unit)*

£6.29

(exc. VAT)

£7.55

(inc. VAT)

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1 - 9£6.29
10 - 24£5.66
25 - 49£5.35
50 - 99£4.97
100 +£4.59

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Packaging Options:
RS Stock No.:
754-5434
Mfr. Part No.:
IPB107N20N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

9.45mm

Maximum Operating Temperature

+175 °C

Length

10.31mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C

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