- RS Stock No.:
- 193-559
- Mfr. Part No.:
- IXFH88N30P
- Brand:
- IXYS
16 In stock - FREE next working day delivery available
Price Each
£11.82
(exc. VAT)
£14.18
(inc. VAT)
Units | Per unit |
---|---|
1 - 5 | £11.82 |
6 - 14 | £10.86 |
15 + | £10.32 |
- RS Stock No.:
- 193-559
- Mfr. Part No.:
- IXFH88N30P
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 88 A |
Maximum Drain Source Voltage | 300 V |
Series | HiperFET, Polar |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 40 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 600 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Length | 16.26mm |
Width | 5.3mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 21.46mm |
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