N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXYS IXTP36N30P
- RS Stock No.:
- 920-0739
- Mfr. Part No.:
- IXTP36N30P
- Brand:
- IXYS
1 In stock - FREE next working day delivery available
Price Each (In a Tube of 50)
£2.86
(exc. VAT)
£3.43
(inc. VAT)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.86 | £143.00 |
| 100 - 200 | £2.746 | £137.30 |
| 250 + | £2.66 | £133.00 |
*price indicative
- RS Stock No.:
- 920-0739
- Mfr. Part No.:
- IXTP36N30P
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 36 A |
| Maximum Drain Source Voltage | 300 V |
| Series | HiperFET, Polar |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 110 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Length | 10.66mm |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Width | 4.83mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 9.15mm |
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