Infineon OptiMOS™ N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK IPB107N20N3GATMA1

Subtotal (1 reel of 1000 units)*

£3,440.00

(exc. VAT)

£4,130.00

(inc. VAT)

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Per Reel*
1000 +£3.44£3,440.00

*price indicative

RS Stock No.:
911-0831
Mfr. Part No.:
IPB107N20N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

65 nC @ 10 V

Length

10.31mm

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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