Infineon HEXFET N-Channel MOSFET, 129 A, 135 V, 3-Pin D2PAK IRF135S203

Subtotal (1 pack of 2 units)*

£4.03

(exc. VAT)

£4.836

(inc. VAT)

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2 +£2.015£4.03

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Packaging Options:
RS Stock No.:
130-0937
Mfr. Part No.:
IRF135S203
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

129 A

Maximum Drain Source Voltage

135 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

441 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

4.83mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Length

10.67mm

Height

9.65mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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