Infineon HEXFET N-Channel MOSFET, 129 A, 135 V, 3-Pin D2PAK IRF135S203

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Subtotal (1 reel of 800 units)*

£928.00

(exc. VAT)

£1,112.00

(inc. VAT)

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Units
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Per Reel*
800 - 800£1.16£928.00
1600 +£1.102£881.60

*price indicative

RS Stock No.:
168-5948
Mfr. Part No.:
IRF135S203
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

129 A

Maximum Drain Source Voltage

135 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

441 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Height

9.65mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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