Infineon HEXFET N-Channel MOSFET, 300 A, 60 V, 7-Pin D2PAK-7 IRLS3036TRL7PP
- RS Stock No.:
- 168-6038
- Mfr. Part No.:
- IRLS3036TRL7PP
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£1,128.00
(exc. VAT)
£1,352.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 9,600 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.41 | £1,128.00 |
*price indicative
- RS Stock No.:
- 168-6038
- Mfr. Part No.:
- IRLS3036TRL7PP
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK-7 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 380 W | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 110 nC @ 4.5 V | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK-7 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 380 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 110 nC @ 4.5 V | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
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