Infineon HEXFET N-Channel MOSFET, 300 A, 60 V, 7-Pin D2PAK-7 IRLS3036TRL7PP
- RS Stock No.:
- 130-1026
- Mfr. Part No.:
- IRLS3036TRL7PP
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£4.66
(exc. VAT)
£5.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 9,758 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £2.33 | £4.66 |
*price indicative
- RS Stock No.:
- 130-1026
- Mfr. Part No.:
- IRLS3036TRL7PP
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK-7 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 380 W | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 110 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.65mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK-7 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 380 W | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 110 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.65mm | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 7-Pin D2PAK-7 IRLS3036TRL7PP
- Infineon HEXFET N-Channel MOSFET 300 A 7-Pin D2PAK-7 AUIRLS3036-7P
- Infineon HEXFET N-Channel MOSFET 60 V, 7-Pin D2PAK-7 IRFS3006TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRL40SC209
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS3004TRL7PP
- Infineon HEXFET N-Channel MOSFET 100 V, 7-Pin D2PAK-7 IRFS4010TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS7430TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRLS3034TRL7PP