Microchip DN3135 N-Channel MOSFET, 730 mA, 350 V Depletion, 3-Pin SOT-89 DN3135N8-G

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£3.28

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£3.935

(inc. VAT)

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50 - 245£0.578£2.89
250 - 495£0.518£2.59
500 +£0.41£2.05

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Packaging Options:
RS Stock No.:
649-459
Mfr. Part No.:
DN3135N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

730 mA

Maximum Drain Source Voltage

350 V

Series

DN3135

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Depletion

Transistor Material

Si

Number of Elements per Chip

1

The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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