Microchip LND01 Silicon N-Channel MOSFET, 300 mA, 9 V Depletion, 5-Pin SOT-23 LND01K1-G
- RS Stock No.:
- 598-897
- Mfr. Part No.:
- LND01K1-G
- Brand:
- Microchip
Subtotal (1 reel of 3000 units)*
£1,341.00
(exc. VAT)
£1,608.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 08 December 2025
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Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.447 | £1,341.00 |
*price indicative
- RS Stock No.:
- 598-897
- Mfr. Part No.:
- LND01K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 300 mA | |
Maximum Drain Source Voltage | 9 V | |
Series | LND01 | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Channel Mode | Depletion | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 9 V | ||
Series LND01 | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Channel Mode Depletion | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
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