Microchip DN3145 Silicon N-Channel MOSFET, 120 mA, 450 V Depletion, 3-Pin SOT-89 DN3145N8-G

Subtotal (1 reel of 2000 units)*

£1,414.00

(exc. VAT)

£1,696.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£0.707£1,414.00

*price indicative

RS Stock No.:
598-898
Mfr. Part No.:
DN3145N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

450 V

Package Type

SOT-89

Series

DN3145

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Depletion

Transistor Material

Silicon

Number of Elements per Chip

1

The Microchip Depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage

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