Microchip DN3145 Silicon N-Channel MOSFET, 120 mA, 450 V Depletion, 3-Pin SOT-89 DN3145N8-G
- RS Stock No.:
- 598-898
- Mfr. Part No.:
- DN3145N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£1,414.00
(exc. VAT)
£1,696.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 29 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £0.707 | £1,414.00 |
*price indicative
- RS Stock No.:
- 598-898
- Mfr. Part No.:
- DN3145N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 mA | |
| Maximum Drain Source Voltage | 450 V | |
| Package Type | SOT-89 | |
| Series | DN3145 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 mA | ||
Maximum Drain Source Voltage 450 V | ||
Package Type SOT-89 | ||
Series DN3145 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Microchip Depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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