Microchip DN2450 Silicon N-Channel MOSFET, 700 mA, 500 V Depletion, 3-Pin TO-243AA DN2450N8-G
- RS Stock No.:
- 598-247
- Mfr. Part No.:
- DN2450N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£1,414.00
(exc. VAT)
£1,696.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £0.707 | £1,414.00 |
*price indicative
- RS Stock No.:
- 598-247
- Mfr. Part No.:
- DN2450N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 700 mA | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-243AA | |
| Series | DN2450 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 700 mA | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-243AA | ||
Series DN2450 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip Low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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