Microchip DN2450 Silicon N-Channel MOSFET, 700 mA, 500 V Depletion, 3-Pin DPAK DN2450K4-G
- RS Stock No.:
- 598-985
- Mfr. Part No.:
- DN2450K4-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£1,328.00
(exc. VAT)
£1,594.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,998,000 unit(s) shipping from 27 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2000 + | £0.664 | £1,328.00 |
*price indicative
- RS Stock No.:
- 598-985
- Mfr. Part No.:
- DN2450K4-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 700 mA | |
Maximum Drain Source Voltage | 500 V | |
Package Type | TO-252 | |
Series | DN2450 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Channel Mode | Depletion | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 700 mA | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-252 | ||
Series DN2450 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Microchip Low threshold depletion-mode transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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