Microchip DN3765 Silicon N-Channel MOSFET, 200 mA, 650 V Depletion, 3-Pin DPAK DN3765K4-G

Subtotal (1 reel of 2000 units)*

£5,224.00

(exc. VAT)

£6,268.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 +£2.612£5,224.00

*price indicative

RS Stock No.:
598-171
Mfr. Part No.:
DN3765K4-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

650 V

Package Type

TO-252

Series

DN3765

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Depletion

Transistor Material

Silicon

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Microchip Depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage

Related links