Microchip DN3765 Silicon N-Channel MOSFET, 200 mA, 650 V Depletion, 3-Pin DPAK DN3765K4-G
- RS Stock No.:
- 598-171
- Mfr. Part No.:
- DN3765K4-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£5,224.00
(exc. VAT)
£6,268.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 30 January 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £2.612 | £5,224.00 |
*price indicative
- RS Stock No.:
- 598-171
- Mfr. Part No.:
- DN3765K4-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-252 | |
| Series | DN3765 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-252 | ||
Series DN3765 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Microchip Depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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