Microchip DN2535 Silicon N-Channel MOSFET, 150 mA, 350 V Depletion, 3-Pin TO-220 DN2535N5-G

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Subtotal (1 box of 300 units)*

£533.10

(exc. VAT)

£639.60

(inc. VAT)

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Units
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Per Box*
300 +£1.777£533.10

*price indicative

RS Stock No.:
598-063
Mfr. Part No.:
DN2535N5-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

350 V

Package Type

TO-220

Series

DN2535

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Depletion

Number of Elements per Chip

1

Transistor Material

Silicon

COO (Country of Origin):
CN
The Microchip Low threshold depletion mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage

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