Microchip MIC94050 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 MIC94050YM4-TR
- RS Stock No.:
- 599-040
- Mfr. Part No.:
- MIC94050YM4-TR
- Brand:
- Microchip
Subtotal (1 reel of 3000 units)*
£1,419.00
(exc. VAT)
£1,704.00
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.473 | £1,419.00 |
*price indicative
- RS Stock No.:
- 599-040
- Mfr. Part No.:
- MIC94050YM4-TR
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Series | MIC94050 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -25°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Length | 3.05mm | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Series MIC94050 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -25°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Length 3.05mm | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip 4-terminal silicon gate P-channel MOSFET provides low on-resistance in a compact package. Designed for high-side switch applications where space is critical, it typically exhibits an on-resistance of 0.125Ω at a 4.5V gate-to-source voltage. The MOSFET operates with as low as 1.8V gate-to-source voltage.
Operates with 1.8V gate-to-source voltage
Separate substrate connection allows reverse blocking
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