N-Channel MOSFET, 72 mA, 350 V Depletion, 3-Pin SOT-23 Microchip DN3135K1-G
- RS Stock No.:
- 165-5144
- Mfr. Part No.:
- DN3135K1-G
- Brand:
- Microchip
9000 In stock - FREE next working day delivery available
Added
Price Each (On a Reel of 3000)
£0.424
(exc. VAT)
£0.509
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 + | £0.424 | £1,272.00 |
| *price indicative | ||
- RS Stock No.:
- 165-5144
- Mfr. Part No.:
- DN3135K1-G
- Brand:
- Microchip
Technical Reference
Legislation and Compliance
Product Details
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
MOSFET Transistors, Microchip
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 72 mA |
| Maximum Drain Source Voltage | 350 V |
| Package Type | SOT-23 |
| Series | DN3135 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 35 Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation | 360 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -3.5 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Length | 3.04mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.8V |
| Height | 1.02mm |
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