Microchip LND150 N-Channel MOSFET, 13 mA, 500 V Depletion, 3-Pin SOT-23 LND150K1-G
- RS Stock No.:
- 333-174
- Mfr. Part No.:
- LND150K1-G
- Brand:
- Microchip
Subtotal (1 reel of 3000 units)*
£1,086.00
(exc. VAT)
£1,302.00
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.362 | £1,086.00 |
*price indicative
- RS Stock No.:
- 333-174
- Mfr. Part No.:
- LND150K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 mA | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | SOT-23 | |
| Series | LND150 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 mA | ||
Maximum Drain Source Voltage 500 V | ||
Package Type SOT-23 | ||
Series LND150 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Depletion | ||
Number of Elements per Chip 1 | ||
The Microchip High voltage N channel depletion mode transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally on switches, precision constant current sources, voltage ramp generation and amplification.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
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