The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

The Microchip LND150 N-channel depletion mode (normally-on) transistor utilizes lateral DMOS technology. The gate is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. It has Drain-to-source and Drain-to-gate voltage of 500V and static drain-to-source on-state resistance of 1kΩ.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
Lead (Pb)-free
3-lead TO-92 package

MOSFET Transistors, Microchip