Microchip DN3135 N-Channel MOSFET, 72 mA, 350 V Depletion, 3-Pin SOT-23 DN3135K1-G
- RS Stock No.:
- 165-6450
- Mfr. Part No.:
- DN3135K1-G
- Brand:
- Microchip
Subtotal (1 pack of 25 units)*
£7.575
(exc. VAT)
£9.10
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 10,825 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
25 + | £0.303 | £7.58 |
*price indicative
- RS Stock No.:
- 165-6450
- Mfr. Part No.:
- DN3135K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 72 mA | |
Maximum Drain Source Voltage | 350 V | |
Series | DN3135 | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 35 Ω | |
Channel Mode | Depletion | |
Maximum Power Dissipation | 360 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -3.5 V | |
Length | 3.04mm | |
Number of Elements per Chip | 1 | |
Width | 1.4mm | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.8V | |
Height | 1.02mm | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 mA | ||
Maximum Drain Source Voltage 350 V | ||
Series DN3135 | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -3.5 V | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.8V | ||
Height 1.02mm | ||
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
MOSFET Transistors, Microchip
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