Microchip DN3135 N-Channel MOSFET, 72 mA, 350 V Depletion, 3-Pin SOT-23 DN3135K1-G

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£9.10

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Packaging Options:
RS Stock No.:
165-6450
Mfr. Part No.:
DN3135K1-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

72 mA

Maximum Drain Source Voltage

350 V

Series

DN3135

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

35 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-3.5 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Number of Elements per Chip

1

Width

1.4mm

Forward Diode Voltage

1.8V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Supertex N-Channel Depletion Mode MOSFET Transistors


The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features


High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications


Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage


MOSFET Transistors, Microchip

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