Microchip DN3525 Type N-Channel Single MOSFETs, 360 mA, 250 V Depletion, 3-Pin SOT-89 DN3525N8-G
- RS Stock No.:
- 649-455
- Mfr. Part No.:
- DN3525N8-G
- Brand:
- Microchip
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Subtotal (1 tape of 5 units)*
£3.31
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£3.97
(inc. VAT)
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In Stock
- 2,000 unit(s) ready to ship
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | £0.662 | £3.31 |
| 50 - 245 | £0.582 | £2.91 |
| 250 - 495 | £0.522 | £2.61 |
| 500 + | £0.468 | £2.34 |
*price indicative
- RS Stock No.:
- 649-455
- Mfr. Part No.:
- DN3525N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-89 | |
| Series | DN3525 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-89 | ||
Series DN3525 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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