Microchip VN2460 Silicon N-Channel MOSFET, 250 mA, 600 V, 3-Pin SOT-89 VN2460N8-G
- RS Stock No.:
- 598-312
- Mfr. Part No.:
- VN2460N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
£1,674.00
(exc. VAT)
£2,008.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £0.837 | £1,674.00 |
*price indicative
- RS Stock No.:
- 598-312
- Mfr. Part No.:
- VN2460N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 250 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SOT-89 | |
| Series | VN2460 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SOT-89 | ||
Series VN2460 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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