Microchip TN2510 N-Channel MOSFET, 730 mA, 100 V, 3-Pin SOT-89 TN2510N8-G

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Packaging Options:
RS Stock No.:
649-584
Mfr. Part No.:
TN2510N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

730 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-89

Series

TN2510

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Si

Number of Elements per Chip

1

The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

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