Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

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50 - 245£0.668£3.34
250 - 495£0.60£3.00
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Packaging Options:
RS Stock No.:
649-584
Mfr. Part No.:
TN2510N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

0.73A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-89

Series

TN2510

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.6W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Standards/Approvals

Lead (Pb)-free/RoHS

Automotive Standard

No

The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

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