Microchip VN2460 Silicon N-Channel MOSFET, 250 mA, 600 V, 3-Pin TO-92 VN2460N3-G
- RS Stock No.:
- 598-665
- Mfr. Part No.:
- VN2460N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£808.00
(exc. VAT)
£970.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 07 November 2025
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Units | Per unit | Per Bag* |
---|---|---|
1000 + | £0.808 | £808.00 |
*price indicative
- RS Stock No.:
- 598-665
- Mfr. Part No.:
- VN2460N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | N | |
Maximum Continuous Drain Current | 250 mA | |
Maximum Drain Source Voltage | 600 V | |
Series | VN2460 | |
Package Type | TO-92 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 mA | ||
Maximum Drain Source Voltage 600 V | ||
Series VN2460 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- PH
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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