Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS Stock No.:
- 598-726
- Mfr. Part No.:
- VP0550N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£1,198.00
(exc. VAT)
£1,438.00
(inc. VAT)
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- Shipping from 23 February 2026
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | £1.198 | £1,198.00 |
*price indicative
- RS Stock No.:
- 598-726
- Mfr. Part No.:
- VP0550N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5.08mm | |
| Width | 4.19 mm | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 5.08mm | ||
Width 4.19 mm | ||
Height 5.33mm | ||
Automotive Standard No | ||
The Microchip P Channel enhancement-mode vertical MOSFET is a low-threshold, normally-off transistor that utilizes a vertical DMOS structure and Supertex’s proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent in MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring robust and reliable performance.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
High input impedance and high gain
Excellent thermal stability
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