Microchip VN0109 Silicon N-Channel MOSFET, 2.5 A, 90 V, 3-Pin TO-92 VN0109N3-G
- RS Stock No.:
- 598-980
- Mfr. Part No.:
- VN0109N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£505.00
(exc. VAT)
£606.00
(inc. VAT)
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- Shipping from 01 December 2025
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Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | £0.505 | £505.00 |
*price indicative
- RS Stock No.:
- 598-980
- Mfr. Part No.:
- VN0109N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 90 V | |
| Package Type | TO-92 | |
| Series | VN0109 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 90 V | ||
Package Type TO-92 | ||
Series VN0109 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- PH
The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.
Ease of paralleling
Low power drive requirement
High input impedance and high gain
Low power drive requirement
High input impedance and high gain
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