Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- RS Stock No.:
- 284-727
- Mfr. Part No.:
- IMT65R072M1HXUMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-727
- Mfr. Part No.:
- IMT65R072M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Package Type | PG-HSOF-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolSiC MOSFET 650 V G1 | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon 650 V CoolSiC MOSFET represents a pinnacle of performance and reliability, expertly engineered for a wide range of demanding applications. Built on advanced silicon carbide technology, this device provides exceptional efficiency, particularly in high temperature environments. With over two decades of development, it combines outstanding switching capabilities and robustness to simplify integration into your circuitry. Designed for versatility, its unique characteristics make it ideally suited for applications such as switch mode power supplies, uninterruptible power supplies, and energy efficient electric vehicle infrastructure. Trust in this advanced MOSFET to enhance your system’s performance while reducing size and cost.
Optimised for high current switching
Resilient fast body diode for commutation
Thermal stability at elevated temperatures
Minimal input capacitance ensures rapid response
Extended gate oxide reliability for longevity
Low total gate charge for efficiency
Seamless integration with standard drivers
Reduced losses via Kelvin source configuration
Qualified for industrial applications per JEDEC
Compact design promotes higher power density
Resilient fast body diode for commutation
Thermal stability at elevated temperatures
Minimal input capacitance ensures rapid response
Extended gate oxide reliability for longevity
Low total gate charge for efficiency
Seamless integration with standard drivers
Reduced losses via Kelvin source configuration
Qualified for industrial applications per JEDEC
Compact design promotes higher power density
Related links
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon IMT SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1